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strong ir fet? irf60dm206 application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant base part number package type standard pack orderable part number form quantity irf60dm206 directfet ? me tape and reel 4800 irf60dm206 v dss 60v r ds(on) typ. 2.2m ?? max 2.9m ?? i d 130a fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature ? directfet ? isometric ? me directfet ? n-channel power mosfet ? 1 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 1 2 3 4 5 6 7 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 80a t j = 25c t j = 125c dd g ss ss s 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a )
? irf60dm206 ? 2 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 notes: ? mounted on minimum footprint full size board with metalized back and with small clip heatsink. ? used double sided cooling , mount ing pad with large heatsink. absolute maximum ratings ?? ? symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 130 ? i d @ t c = 100c continuous drain current, v gs @ 10v 82 ? a i dm pulsed drain current ?? 530 ? p d @t c = 25c maximum power dissipation 96 w linear derating factor 0.78 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 150 c t stg storage temperature range avalanche characteristics ?? e as (thermally limited) single pulse avalanche energy ?? 81 e as (thermally limited) single pulse avalanche energy ?? 154 i ar avalanche current ?? see fig 15, 15, 23a, 23b a e ar repetitive avalanche energy ?? mj thermal resistance ?? ? symbol parameter typ. max. units r ? ja junction-to-ambient ??? ??? 45 r ? ja junction-to-ambient ?? 12.5 ??? r ? ja junction-to-ambient ?? 20 ??? c/w r ? jc junction-to-case ??? ??? 1.3 r ? j-pcb junction-to-pcb mounted 0.75 ??? mj static @ t j = 25c (unless otherwise specified) ??? ? ?? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 38 ??? mv/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 2.2 2.9 m ? v gs = 10v, i d = 80a ? ??? 2.7 ??? ? m ? v gs = 6.0v, i d = 40a ? v gs(th) gate threshold voltage 2.1 3.0 ? 3.7 v v ds = v gs , i d = 150a i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 60v, v gs = 0v ??? ??? 150 v ds = 60v, v gs = 0v, t j = 125c gate-to-source forward l eakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g internal gate resistance ??? 0.8 ??? ? i gss ? tc measured with thermocouple mounted to top (drain) of part. ? surface mounted on 1 in. square cu board (still air). ? mounted to a pcb with small clip heatsink (still air) ? ? mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
? irf60dm206 ? 3 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 d s g dynamic @ t j = 25c (unless otherwise specified) ???? ? symbol parameter min. typ. max. units conditions gfs forward transconductance 148 ??? ??? s v ds = 10v, i d = 80a q g total gate charge ??? 133 200 nc i d = 80a q gs gate-to-source charge ??? 33 ??? v ds =30v q gd gate-to-drain ("miller" ) charge ??? 40 ??? v gs = 10v ? q sync total gate charge sync. (q g - q gd ) ??? 93 ??? t d(on) turn-on delay time ??? 17 ??? ns v dd = 30v t r rise time ??? 32 ??? i d = 30a t d(off) turn-off delay time ??? 60 ??? r g = 2.7 ? t f fall time ??? 30 ??? v gs = 10v ? c iss input capacitance ??? 6530 ??? pf v gs = 0v c oss output capacitance ??? 650 ??? v ds = 25v c rss reverse transfer capacitance ??? 420 ??? ? = 1.0mhz c oss eff. (er) effective output capacitanc e (energy related) ??? 670 ??? v gs = 0v, v ds = 0v to 48v ? c oss eff. (tr) effective output capaci tance (time relat ed) ??? 840 ??? v gs = 0v, v ds = 0v to 48v ? diode characteristics ???? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 130 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 530 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 80a, v gs = 0v ? dv/dt peak diode recovery ? ??? 8.5 ??? v/ns t j =150c,i s =80a, v ds = 60v t rr reverse recovery time ??? 47.5 ??? ns t j = 25 c v r = 51v, ??? 48 ??? t j = 125c i f = 80a q rr reverse recovery charge ??? 79 ??? t j = 25c di/dt = 100a/s ? ??? 84 ??? t j = 125c i rrm reverse recovery current ??? 2.9 ??? a t j = 25c nc notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t j max, starting t j = 25c, l = 25h r g = 50 ? , i as = 80a, v gs =10v. ? i sd 80a, di/dt 1410a/s, v dd v( br)dss , t j 150c. ?? pulse width 400s; duty cycle 2%. ?? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ?? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. ? r ? is measured at t j approximately 90c. ? limited by t j max, starting t j = 25c, l= 1mh, r g = 50 ? , i as = 17.5a, v gs =10v.
? irf60dm206 ? 4 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs . gate-to-source voltage 3 4 5 6 7 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 80a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 180 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 80a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v
? irf60dm206 ? 5 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 12. typical c oss stored energy fig 13. typical on-resistance vs. drain current fig 9. typical source-drain diode forward voltage 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 58 60 62 64 66 68 70 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma -10 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e n e r g y ( j ) 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by rds(on) 100sec dc 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 1 2 3 4 5 6 7 8 9 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v
? irf60dm206 ? 6 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figure 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 80a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? irf60dm206 ? 7 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 53a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 80a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 50 100 150 200 250 300 q r r ( n c ) i f = 53a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 50 100 150 200 250 300 q r r ( n c ) i f = 80a v r = 51v t j = 25c t j = 125c
? irf60dm206 ? 8 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24a. switching time test circuit fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irf60dm206 ? 9 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ directfet ? board footprint, me outline (medium size can, e-designation) please see directfet ? application note an-1035 for all details regarding the assembly of directfet ? this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source g d s dd d s ss s
? irf60dm206 ? 10 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 directfet ? outline dimension, me outline (medium size can, e-designation) please see directfet ? application note an-1035 for all details regarding the assembly of directfet ? . this includes all recommendations for stencil and substrate designs. directfet ? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package/ part number batch number date code line above the last character of the date code indicates "lead-free" gate marking logo dimensions are shown in millimeters (inches) code a b c d e f g h j l 0.017 0.156 0.044 0.018 0.024 max 0.250 0.38 3.85 1.08 0.35 0.58 min 6.25 4.80 0.42 3.95 1.12 0.45 0.62 max 6.35 5.05 0.015 0.152 0.043 0.023 0.014 min 0.189 0.246 metric imperial dimensions 0.93 0.97 1.28 1.32 0.038 0.037 0.052 0.050 j1 0.023 0.62 0.58 0.024 k 0.199 l1 m p 0.028 0.007 0.59 0.08 0.70 0.17 0.023 0.003 n 0.02 0.08 0.0008 0.003 0.085 2.035 2.165 0.080 0.033 0.965 0.835 0.038 0.146 3.585 3.715 0.141
? irf60dm206 ? 11 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 directfet ? tape & reel dimension (showing component orientation). note: for the most current drawing please refer to ir website at http://www.irf.com/package/ note: controlling dimensions in mm std reel quantity is 4800 parts, ordered as irf60dm206 reel dimensions max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063
? irf60dm206 ? 12 www.irf.com ? 2015 international rectifier submit datasheet feedback june 04, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level dfet 1.5 msl1 (per jedec j-std-020d ?? ) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. * industrial qualification standards except autoclave test conditions.

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